Display device and manufacturing method thereof

ABSTRACT

A display device including a partition wall disposed on a substrate between a first electrode and a second electrode. The partition wall has an opening. A light emitting layer is disposed in the opening. An auxiliary layer having lyophobicity is disposed between the partition wall and the second electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2018-0149531, filed on Nov. 28, 2018 in the KoreanIntellectual Property Office, and Korean Patent Application No.10-2019-0067281 filed on Jun. 7, 2019 in the Korean IntellectualProperty Office, the disclosures of Which are incorporated by referencein their entirety herein.

TECHNICAL FIELD

The present disclosure relates to a display device and a manufacturingmethod thereof.

DISCUSSION OF RELATED ART

A light emitting display device includes two electrodes and a lightemitting layer disposed therebetween. An electron injected from oneelectrode that serves as a cathode, and a hole injected from the otherelectrode which serves as an anode are coupled with each other in thelight emitting layer to generate an exciton. The exciton emits energy toemit light.

The light emitting display device includes a plurality of pixels havinga light emitting diode including a cathode, an anode, and a lightemitting layer, and each pixel includes a plurality of transistors andcapacitors for driving the light emitting diode.

The above information is only for enhancement of understanding of thepresent inventive concepts, and therefore may contain information thatdoes not form the prior art and which is already known in the relevantart.

SUMMARY

Exemplary embodiments provide a display device and a manufacturingmethod thereof that may stably include a light emitting layer formed bya solution process by providing an auxiliary layer that is effectivelyformed while providing lyophobicity on a partition wall.

An exemplary embodiment provides a display device including a partitionwall disposed on a substrate between a first electrode and a secondelectrode. The partition wall has an opening. A light emitting layer isdisposed in the opening. An auxiliary layer having lyophobicity isdisposed between the partition wall and the second electrode,

A maximum thickness of the auxiliary layer may be about 100 nm or moreand about 200 nm or less.

A maximum thickness of the partition wall may be about 1 μm or more andabout 1.5 μm or less.

The auxiliary layer may not overlap the opening.

The auxiliary layer may include at least one of a fluorine-basedcompound and a siloxane-based compound.

The fluorine-based compound may be represented by Chemical Formula 1,and the siloxane-based compound may be represented by Chemical Formula2.

A lateral edge of the auxiliary layer is inclined and is aligned with aninclined lateral edge of the partition wall.

The auxiliary layer may expose a portion of an upper surface of thepartition wall.

The auxiliary layer may overlap a lateral surface of the partition wall.

The light emitting layer may include a quantum dot.

The display device may further include a red color converting layer, agreen color converting layer, and a transmissive layer that overlaps thelight emission layer.

Each of the red color converting layer and the green color convertinglayer may include a quantum dot.

Another exemplary embodiment provides a display device including apartition wall disposed on a substrate between a first electrode and asecond electrode. The partition wall has an opening. A light emittinglayer is disposed in the opening. An auxiliary layer is disposed betweenthe partition wall and the second electrode. The auxiliary layerincludes a plurality of nanoparticles, and a surface of the auxiliarylayer facing the second electrode is provided with protrusions anddepressions.

A thickness of the auxiliary layer may be about 30 nm to about 200 nm.

The plurality of nanoparticles may include silica nanoparticles.

Another exemplary embodiment provides a manufacturing method of adisplay device, including forming a thin film transistor and a pixelelectrode connected to the thin film transistor on a substrate. A firstmaterial layer is formed overlapping the pixel electrode on thesubstrate. The first material layer is etched to form a partition wallincluding an opening. A residual film that is formed on the pixelelectrode is removed. An auxiliary layer is formed having lyophobicityon the partition wall.

The removing of the residual film may use at least one of a plasmaprocess and a UVO₃ process.

The forming of the auxiliary layer may include forming a second materiallayer on the partition wall, and removing an uncured area in the secondmaterial layer, and the removing of the uncured area may use an organicsolvent.

The organic solvent may include at least one of toluene, cyclopentanone,anisole, and propylene glycol methyl ether acetate (PGMEA).

The second material layer may include the same solvent as the organicsolvent.

The manufacturing method of the. display device may further includeproviding a light emitting solution on the opening, and drying the lightemitting solution to form a light emitting layer.

Another exemplary embodiment provides a manufacturing method of adisplay device, including forming a thin film transistor and a pixelelectrode connected to the thin film transistor on a substrate. A firstmaterial layer and a second material layer are sequentially formedoverlapping the substrate on the pixel electrode. The first materiallayer and the second material layer are etched to form a partition gallhaving an opening and an auxiliary layer. A residual film formed on thepixel electrode is removed. The second material layer may include aplurality of nanoparticles.

According to exemplary embodiments of the present inventive concepts, itis possible to stably form a light emitting layer through a solutionprocess by including an auxiliary layer that is stably formed on anupper surface of a partition wall and has lyophobicity. Reliability of alight emitting diode and a display device including such a lightemitting layer may be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a display device accordingto an exemplary embodiment of the present inventive concepts.

FIG. 2 illustrates a cross-sectional view of a display device accordingto an exemplary embodiment of the present inventive concepts.

FIG. 3 illustrates a cross-sectional view of a display device accordingto an exemplary embodiment of the present inventive concepts.

FIG. 4 illustrates a cross-sectional view of a display device accordingto an exemplary embodiment of the present inventive concepts.

FIGS. 5, 6, 7, 8, and 9 illustrate cross-sectional views of a displaydevice manufactured by using a manufacturing method according toexemplary embodiments of the present inventive concepts.

FIGS. 10, 11, and 12 illustrate a schematic cross-sectional view of adisplay device manufactured by using a manufacturing method according toexemplary embodiments of the present inventive concepts.

FIG. 13 illustrates a schematic cross-sectional view of a display deviceaccording to an exemplary embodiment of the present inventive concepts.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

The present invention will be described more fully hereinafter withreference to the accompanying drawings, in which exemplary embodimentsof the invention are shown. As those skilled in the art would realize,the described embodiments may be modified in various different ways, allwithout departing from the spirit or scope of the present disclosure.

Parts that are irrelevant to the description will be omitted to clearlydescribe the present disclosure, and like reference numerals designatelike elements throughout the specification.

Further, in the drawings, the size and thickness of each element arearbitrarily illustrated for ease of description, and the presentdisclosure is not necessarily limited to those illustrated in thedrawings. In the drawings, the thicknesses of layers, films, panels,regions, etc., may be exaggerated for clarity. In the drawings, for easeof description, the thicknesses of some layers and areas areexaggerated.

It will be understood that when an element such as a layer, film,region, or substrate is referred to as being “on” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present. Further,in the specification, the word “on” or “above” means disposed on orbelow the object portion, and does not necessarily mean disposed on theupper side of the object portion based on a gravitational direction.

In addition, unless explicitly described to the contrary, the word“comprise” and variations such as “comprises” or “comprising” will beunderstood to imply the inclusion of stated elements but not theexclusion of any other elements.

Further, throughout the specification, the phrase “on a plane” meansviewing a target portion from the top, and the phrase “on across-section” means viewing a cross-section formed by verticallycutting a target portion from the side.

Hereinafter, a display device according to an exemplary embodiment ofthe present invention will be described. FIG. 1 illustrates across-sectional view of a display device according to an exemplaryembodiment of the present inventive concepts.

Referring to FIG. 1, a substrate 110 may include a transparent glasssubstrate. However, in another exemplary embodiment, the substrate 110may include a plastic layer and a barrier layer that are alternatelystacked. The substrate 110 according to an exemplary embodiment may be aflexible substrate which may be bent, folded, rolled, etc.

A buffer layer 111 is disposed on the substrate 110. The buffer layer111 may prevent impurities or the like from diffusing from the substrate110 toward the inside of the display device. In addition, the bufferlayer 111 may improve a flatness of a surface of the substrate 110(e.g., planarize the surface of the substrate) in embodiments in whichthe surface of the substrate 110 is not uniform.

The buffer layer 111 may include an inorganic insulating material suchas a silicon oxide, a silicon nitride, or the like. However, in someexemplary embodiments, the buffer layer 111 may include an organicinsulating material. The buffer layer 111 may be a single layer or havea multilayer structure. For example, in an exemplary embodiment in whichthe buffer layer 111 is a dual layer, a lower layer thereof may includea silicon nitride and an upper layer thereof may include a siliconoxide. However, exemplary embodiments of the present inventive conceptsare not limited thereto.

A semiconductor layer 130 is disposed on the buffer layer 111. In anexemplary embodiment, the semiconductor layer 130 may include amorphoussilicon, polycrystalline silicon, an oxide semiconductor, and the like.However, exemplary embodiments of the present inventive concepts are notlimited thereto.

The semiconductor layer 130 may include a source region 132 connected toa source electrode 153, a drain region 133 connected to a drainelectrode 155. and a channel region 131 disposed between the sourceregion 132 and the drain region 133, which will be described later. Thesource region 132 and the drain region 133 may be doped with animpurity.

A first insulating film 141 is disposed on the semiconductor layer 130and the buffer layer 111. For example, as shown in FIG. 1, the firstinsulating film 141 may be disposed directly on upper surfaces (e.g., inthe second direction D2) of the semiconductor layer 130 and buffer layer111. The first insulating film 141 may include an inorganic insulatingmaterial such as a silicon nitride, a silicon oxide, a metal oxide, orthe like. However, in some exemplary embodiments, the first insulatingfilm 141 may include an organic insulating material,

A gate electrode 124 is disposed on the first insulating film 141. Forexample, as shown in FIG. 1, the gate electrode 124 may be disposeddirectly on an upper surface (e.g., in the second direction D2) of thefirst insulating film 141. The gate electrode 124 overlaps (e.g., in thesecond direction D2) the channel region 131 of the semiconductor layer130,

The gate electrode 124 may include at least one material selected fromaluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium(Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium(Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti),tungsten (W), and copper (Cu). The gate electrode 124 may include asingle layer or a multilayer structure.

A second insulating film 142 may be disposed on the gate electrode 124and the first insulating film 141. For example, the second insulatingfilm 142 may be disposed directly on an upper surface (e.g., in thesecond direction D2) of the first insulating film 141. The secondinsulating film 142 may include an inorganic insulating material such asa silicon nitride, a silicon oxide or the like. However, in someexemplary embodiments, the second insulating film 142 may include anorganic insulating material.

The source electrode 153 and the drain electrode 155 may be disposed onthe second insulating film 142. For example, as shown in FIG. 1, thesource electrode 153 and the drain electrode 155 may be disposeddirectly on an upper surface (e.g., in the second direction D2) of thesecond insulating film 142.

The source electrode 153 and the gate electrode 155 may include at leastone material selected from aluminum (Al), platinum (Pt), palladium (Pd),silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd),iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum(Mo), titanium (Ti), tungsten (W), and copper (Cu). The source electrode153 and the drain electrode 155 may include a single layer or amultilayer structure.

The source electrode 153 and the drain electrode 155 may be connected tothe source region 132 and the drain region 133 of the semiconductorlayer 130, respectively, through contact holes formed in the firstinsulating film 141 and the second insulating film 142,

A third insulating film 160 is disposed on the source electrode 153 andthe drain electrode 155. The third insulating film 160 may cover thesource electrode 153 and the drain electrode 155 for planarizationthereof. The third insulating film 160 may include an organic insulatingmaterial or an inorganic insulating material. The first electrode, whichis a pixel electrode 191, is disposed on the third insulating film 160.For example, as shown in FIG. 1, the pixel electrode 191 may be disposeddirectly on an upper surface (e.g., in the second direction D2) of thethird insulating film 160. The pixel electrode 191 may be connected tothe drain electrode 155 through a contact hole formed in the thirdinsulating film 160.

The pixel electrode 191 may be a transparent electrode, a transflectiveelectrode, or a reflective electrode. In embodiments in which the pixelelectrode 191 is a transparent electrode or a transflective electrode,the pixel electrode 191 may be formed of ITO, IZO, ZnO, In₂O₃, IGO, orAZO. In embodiments in which the pixel electrode 191 is a reflectiveelectrode, the pixel electrode 191 may include a reflective filmincluding Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and a compoundthereof, and a layer including ITO, IZO, ZnO, InO₃, IGO, or AZO.However, exemplary embodiments of the pixel electrode 191 are notlimited thereto, and the pixel electrode 191 may include variousmaterials, and may have variously modified structures such as a singlelayer structure or a multi-layer structure.

A partition wall 360 is disposed on the pixel electrode 191 and thethird insulating film 160. For example, as shown in FIG. 1, thepartition wall 360 may be disposed directly on an upper surface (e.g.,in the second direction D2) and lateral edge surfaces of the pixelelectrode 191 and an upper surface of the third insulating film 160. Thepartition wall 360 includes an opening 365 that exposes a portion of thepixel electrode 191. A light emitting layer 370 may be disposed in theopening 365. For example, as shown in FIG. 1, the light emitting layer370 may be disposed directly on the portion of the pixel electrode 191exposed by, the opening 365. An exposed region of the pixel electrode191 having the light emitting layer thereon may be a light emittingregion and a region in which the partition wall 360 covers the pixelelectrode may be a non-light emitting region.

In an exemplary embodiment, the partition wall 360 may be lyophilic. Ina process in which a light emitting solution is provided in the opening365, the light emitting solution may be stably injected into theopening, adjacent to the lyophilic partition wall 360. The lyophilicpartition wall 360 may help stably position the light emitting solutionwithin the opening 365.

The partition wall 360 may include an organic material. For example, inan exemplary embodiment, the organic material may be benzocyclobutene, apolyimide resin, a polyacrylic resin, a polyimide resin, a phenol resin,or a siloxane-based inorganic material. However, exemplary embodimentsof the present inventive concepts are not. limited thereto. Thepartition wail 360 may additionally include at least one of aninitiator, a crosslinking agent, a photoactive agent, and a surfactant.The partition wall 360 may include a photoactive agent when it includesa positive photoresist, and the partition wall 360 may include aninitiator when it includes a negative photoresist.

A maximum thickness t1 of the partition wall 360 (e.g., the length froma top surface of the partition wall to a bottom surface of the partitionwall in the second direction D2) may be about 1 μm to about 1.5 μm.Lateral edges of the partition wall 360 forming the opening may have atapered shape toward the substrate 110. For example, the opening 365 mayexpose lateral edges of the partition wall 360 which are spaced fartherapart as the distance from the substrate increases. The thickness t1 ofthe partition wall 360 in the flat region which does not include theinclined lateral edges of the partition wall may be about 1 μm to about1.5 μm. In embodiments in which the thickness of the partition wall 360is less than about 1 μm, a distinction between a light emitting regionin which the light emitting layer is disposed and a non-light emittingregion in which a light emitting layer is not disposed is not clear anda resolution of the display device may be lowered. In embodiments inwhich the thickness of the partition wall 360 is greater than about 1.5μm, it is difficult for other components that are stacked on thepartition 360 to have a uniform profile in a continuous shape.

The light emitting layer 370 is disposed on the pixel electrode 191exposed by the opening 365 as described above. A common electrode 270 isdisposed on the light emitting layer 370 and the partition wall 360. Forexample, as shown in FIG. 1, the common electrode 270 may be disposeddirectly on an upper surface (e.g., in the second direction D2) of thelight emitting layer 370 and the partition wall 360.

The pixel electrode 191, the light emitting layer 370, and the commonelectrode 270 may form a light emitting diode. The common electrode 270may be a transparent electrode, a transflective electrode, or areflective electrode.

When the common electrode 270 is a transparent electrode or atransflective electrode, the common electrode 270 may include a layerincluding a metal having a small work function, such as Li, Ca, LiF/Ca,LiF/Al, Al, Ag, and a compound thereof, and a transparent layer such asITO, IZO, ZnO, or In₂O₃, or a transflective conductive layer. When thecommon electrode 270 is a reflective electrode, it may include, forexample, a layer including Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, and acompound thereof. However, the materials and the stacked structure ofthe common electrode 270 are not limited thereto, and exemplaryembodiments of the present inventive concepts may have variousmodifications and arrangements.

The pixel electrode 191 is an anode that is a hole injection electrode,and the common electrode 270 is a cathode that is an electron injectionelectrode. However, exemplary embodiments of the present inventiveconcepts are not limited thereto. For example, in other exemplaryembodiments, the pixel electrode 191 may be a cathode and the commonelectrode 270 may be an anode according to a driving method of thedisplay device. Holes and electrons are injected into the light emittinglayer 370 from the pixel electrode 191 and the common electrode 270,respectively, and exitons generated by coupling, the injected holes andelectrons fall from an excited state to a ground state to emit light.

In an exemplary embodiment, the light emitting layer 370 may include alow molecular organic material or a polymer organic material such aspoly(3,4-ethylenedioxythiophene) (PEDOT). The light emitting layer 370may include a multilayer structure that includes a light emitting layerand at least one of a hole injecting layer, a hole transporting layer,an electron transporting layer, and an electron injecting layer. Inembodiments in which all of these layers are included, the holeinjecting layer is disposed on the pixel electrode 191, which is ananode, and the hole transporting layer, the light emitting layer, theelectron transporting layer, and an electron injecting layer may besequentially stacked thereon.

The light emitting layer 370 according to the exemplary embodiment mayinclude a quantum dot. The quantum dot may emit red light, green light,or blue light. In an exemplary embodiment, a core of the quantum dot maybe selected from Group II-VI compounds, Group III-V compounds, GroupIV-VI compounds, Group IV elements, Group IV compounds, and combinationsthereof.

The Group II-VI compound may be selected from: a two-element compoundselected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe,MgS, and a mixture thereof, a three-element compound selected fromCdSeS, CdSeTe, CdSTe, ZnSeS, ZNSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS,CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe,MgZnS, and a mixture thereof; and a four-element compound selected fromHgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe,HgZnSeS, HgZnSeTe, HgZnSTe, and a mixture thereof.

The Group III-V compound may be selected from: a two-element compoundselected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP,InAs, InSb, and a mixture thereof; a three-element compound selectedfrom GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb,InGaP, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and a mixture thereof;and a four-element compound selected from GaAlNAs, GaAlNSb, GaAlPAs,GaMPSn, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs,InAlNSb, InAlPAs, InAlPSb, and a mixture thereof.

The Group IV-VI compound may be selected from: a two-element compoundselected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a mixture thereof; athree-element compound selected from SnSeS, SnSeTe, SnSTe, PbSeS,PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a mixture thereof; and afour-element compound selected from SnPbSSe, SnPbSeTe, SnPbSTe, and amixture thereof. The Group IV element may be selected from Si, Ge, and amixture thereof For example, the Group IV compound may be a two-elementcompound selected from SiC, SiGe, and a mixture thereof.

The two-element compound, the three-element compound, or thefour-element compound may be present in particles of the quantum dots atuniform concentrations, or they may be divided into states havingpartially different concentrations to be present in the same particle,respectively. In addition, a core/shell structure in which some quantumdots enclose some other quantum dots may be possible. In an exemplaryembodiment, an interface between the core and the shell may have aconcentration gradient in which a concentration of elements of the shelldecreases as the distance to the shell center decreases.

In some exemplary embodiments, the quantum dot may have a core-shellstructure that includes a core including the nanocrystal described aboveand a shell surrounding the core. The shell of the quantum dot may serveas a passivation layer for maintaining a semiconductor characteristicand/or as a charging layer for applying an electrophoreticcharacteristic to the quantum dot by preventing chemical denaturation ofthe core. The shell may be a single layer or have a multilayerstructure. An example of the shell of the quantum dot includes a metal.or nonmetal oxide, a semiconductor compound, or a combination thereof.

For example, the metal or nonmetal oxide may be a two-element compoundsuch as SiO₂, Al₂O₃, TiO₂, ZnO, MnO, Mn₂O₃, Mn₃O₄, CuO, FeO, Fe₂O₃,Fe₃O₄, CoO, Co₃O₄, NiO, and the like, or a three-element compound suchas MgAl₂O₄, CoFe₂O₄, NiFe₂O₄, CoMn₂O₄, and the like.

However, exemplary embodiments of the present inventive concepts are notlimited thereto, in addition, the semiconductor compound may be CdS,CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe,HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or the like. However,exemplary embodiments of the present inventive concepts are not limitedthereto.

The quantum dot may have a full width at half maximum (FWHM) of thelight-emitting wavelength spectrum that is equal to or less than about45 nm. For example the quantum dot may have a FWHM equal to or less thanabout 40 nm. In another exemplary embodiment, the quantum dot may have aFWHM equal to or less than about 30 nm. In this range, color purity orcolor reproducibility of the display device may be improved. Inaddition, since light emitted through the quantum dot is emitted in alldirections, a viewing angle of the transmitted light may be improved.

Further, a shape of the quantum dot is not particularly limited and mayinclude a spherical, pyramidal, multi-arm, or cubic nanoparticle,nanotube, nano-wire, nano-fiber, nano-plate particle shape, and thelike.

The quantum dot may control a color of emitted light according to aparticle size thereof. Therefore, the quantum dot may have various lightemitting colors such as blue, red, and green colors.

The light emitting layer 370 may be formed by a solution process. Forexample, the light emitting layer 370 may be formed by using any one ofthe following processes: spin coating, inkjet printing, gravureprinting, roll-to-roll printing, syringe injection, dip coating, spraycoating, relief printing, and screen printing.

In an exemplary embodiment, an auxiliary layer 380 is disposed betweenthe common electrode 270 and the partition wall 360. The auxiliary layer380 may be disposed on an upper surface of the partition wall 360. Forexample, as shown in FIG. 1, a lower surface (e.g., in the seconddirection D2) of the auxiliary layer 380 may be disposed directly on anupper surface of the partition wall 360 and an upper surface of theauxiliary layer 380 may contact a lower surface of the common electrode270. The auxiliary layer 380 may not overlap the opening 365 of thepartition wall 360 in the second direction D2. The auxiliary layer 380may not overlap lateral edge surfaces of the partition wall 360 in thesecond direction D2. The auxiliary layer 380 may be generally spacedapart in the first direction D1 from the opening 365 of the partitionwall. However, as described in more detail later, in an exemplaryembodiment, the lower surface of the lateral edge of the auxiliary layermay substantially overlap (e.g., in the second direction D2) the uppersurface of the lateral edge of the partition wall.

The auxiliary layer 380 according to an exemplary embodiment may havelyophobicity. For example, the auxiliary layer 380 may include acomposition having lyophobicity. During a manufacturing process of thedisplay device in which the light emitting layer is formed through asolution process, a light emitting solution for forming the lightemitting layer 370 may contact the auxiliary layer 380. However, sincethe auxiliary layer 380 has lyophobicity, the light emitting solutionmay be forced away from the auxiliary layer 380 and may be stablypositioned in the opening 365 of the lyophilic partition wall 360 ratherthan being positioned on the auxiliary layer. The light emittingsolution may be positioned in the opening 365 without contacting theauxiliary layer 380, and particularly, it may form a stable lightemitting layer 370 that does not flow over from the opening 365.Therefore, the reliability of the light emitting diode including thelight emitting layer 370 and the display device may thereby be improved.

In the present specification, the lyophobicity means a property ofpushing out a solution and not allowing the solution to penetrate well,and the word “lyophilic” means a property of having an affinity for asolution. For example, a solution may have a low surface bonding forcewith one surface having a lyophobic property and may have an excellentsurface bonding force with another surface being lyophilic. Therefore,according to exemplary embodiments of the present inventive concepts,the surface bonding force between the light emitting solution and theauxiliary layer 380 may be weaker than the surface bonding force betweenthe light emitting solution and the partition wall 360. A contact angleof the light emitting solution with respect to the auxiliary layer 380may be, for example, about 40 degrees or more.

The auxiliary layer 380 may include a material that is lyophobic to thelight emitting solution. In an exemplary embodiment, the auxiliary layer380 may include a monomer or polymer. For example, the auxiliary layer380 may include a fluorine-based compound or a siloxane-based compound.However, in other embodiments, the auxiliary layer 380 may include anycompound having lyophobicity. The fluorine-based compound may berepresented by Chemical Formula 1, and the siloxane-based compound maybe represented by Chemical Formula 2. However, exemplary embodiments ofthe present inventive concepts are not limited thereto.

A maximum thickness t2 of the auxiliary layer 380 may be about 100 nm toabout 200 nm or less. For example, the maximum thickness t2 of theauxiliary layer 380 may be between about 120 nm to about 180 nm or less.Considering that the maximum thickness t1 of the partition wall 360 isabout 1 μm to about 1.5 μm, the auxiliary layer 380 is considerablythinner than the partition wall. The auxiliary layer 380 may be formedto be a thin layer for providing lyophobicity to the upper surface ofthe partition wall 360.

In embodiments in which the thickness of the auxiliary layer 380 is lessthan 100 nm, it may be difficult to substantially form a layer that haslyophobicity. In addition, the thickness of the auxiliary layer 380 maynot exceed 200 nm so that the auxiliary layer 380 is sufficientlylyophobic and the light emitting solution forming the light emittinglayer 370 is stably positioned on the opening 365. In embodiments inwhich the thickness of the auxiliary layer 380 exceeds 200 nm, the lightemitting solution injected into the opening 365 may be excessivelyswollen, and the light emitting solution may flow into an adjacentopening for mixture with the contents therein and may not be stablypositioned in the opening.

In addition, the auxiliary layer 380 may have surface energy of about 15dyne/cm or less, the light emitting solution for forming the lightemitting layer 370 may have surface energy of about 17 to 35 dyne/cm,and the pixel electrode 191 may have surface energy of about 40 dyne/cm.The partition wall 360 may have surface energy of about 30 dyne/cm toabout 43 dyne/cm. The surface energy of the partition wall 360 may begreater than the surface energies of the light emitting layer 370 andthe auxiliary layer 380, and may be smaller than the surface energy ofthe pixel electrode 191.

The auxiliary layer 380 is disposed on the partition wall 360, and mayform a separate layer from the partition wall 360. Since the auxiliarylayer 380 is formed through a separate manufacturing process from thatof the partition wall 360, an interface may be formed between thepartition wall 360 and the auxiliary layer 380.

In addition, the lateral edge 381 of the auxiliary layer 380 mayinclined so that is substantially aligned with the inclined lateral edgeof the partition wall 360. The lower surface of the lateral edge 381 ofthe auxiliary layer 380 and the upper surface of the lateral edge of thepartition wall 360 may substantially overlap (e.g., in the seconddirection D2). In an exemplary embodiment, the auxiliary layer 380 maybe manufactured by using a same mask as a mask used for forming thepartition wall 360 in a manufacturing process.

In embodiments in which the light emitting solution is provided on thesubstrate 110 by a solution process, such as an inkjet process, thelight emitting solution is not positioned on an upper surface of thelyophobic auxiliary layer 380 and may be stably provided in the opening365 included in the partition wall 360. The lyophobic auxiliary layer380 prevents the light emitting solution from overflowing the partitionwall 360. Therefore, the light emitting layer 370 may have improvedreliability, and a light emitting diode and a display device withimproved reliability may be provided.

An encapsulation layer 400 for protecting the light emitting diode maybe disposed on the common electrode 270. For example, as shown in FIG.1, the encapsulation layer 400 may be disposed directly on an uppersurface (e.g., in the second direction D2) of the common electrode 270.The encapsulation layer 400 may be sealed to the substrate 110 by asealant, The encapsulation layer 400 may be formed of various materialssuch as glass, quartz, ceramic, plastic, metal and combinations thereof.

In other exemplary embodiments, the encapsulation layer 400 may bedisposed on the common electrode 270 without using a sealant. Theencapsulation layer 400 may include a single layer of an inorganic filmor a single layer of an organic film. The encapsulation layer 400 mayalso include a multilayer structure in which an inorganic film and anorganic film are alternately stacked. For example, the encapsulationlayer 400 may include two inorganic films, and an organic film disposedbetween the two inorganic films.

In the present specification, a pixel is a minimum unit for displayingan image. For example, in the exemplary embodiment of claim 1, the thinfilm transistor is disposed at each pixel in the display area and thelight emitting diode is connected to the thin film transistor. However,in other exemplary embodiments, one pixel may include at least two thinfilm transistors and one capacitor. However, exemplary embodiments ofthe present inventive concepts are not limited thereto. For example, onepixel may include three or more thin film transistors and two or morecapacitors.

Hereinafter, a display device according to exemplary embodiments will bedescribed with reference to FIG. 2 to FIG. 4. FIG. 2 illustrates across-sectional view of a display device according to an exemplaryembodiment. FIG. 3 illustrates a cross-sectional view of a displaydevice according to an exemplary embodiment FIG. 4 illustrates across-sectional view of a display device according to an exemplaryembodiment. A description of the same constituent elements as those ofthe exemplary embodiment described above will be omitted.

Referring to the exemplary embodiment shown in FIG. 2, the auxiliarylayer 380 may be disposed between the partition wall 360 and the commonelectrode 270. The auxiliary layer 380 may be disposed only on the uppersurface of the partition wall 360, and the lower surface of the lateraledge of the auxiliary layer may not substantially overlap the uppersurface of the inclined lateral edges of the partition wall 360. Forexample, the lateral edge 381 of the auxiliary layer 380 may terminatein the first direction D1 prior to reaching a portion that overlaps theinclined lateral edge of the partition wall in the second direction D2.

The auxiliary layer 380 may expose a portion of an upper surface 360 sof the partition wall 360 from the lateral edge of the partition wall toa portion overlapping the lateral edge of the auxiliary layer in thesecond direction D2. In an exemplary embodiment, the common electrode270 may overlap the portion of the upper surface 360 s of the partitionwall 360 exposed by the auxiliary layer 380 in the second direction D2.

Referring to the exemplary embodiment shown in FIG. 3, the upper andlower portions of the lateral edge 381 of the auxiliary layer 380 mayoverlap not only the upper surface of the partition wall 360, but alsoportions of the lateral edge below the upper surface of the partitionwall 360. For example, the lateral edge 381 of the auxiliary layer mayextend past the edge of the upper surface of the partition wall 360 inthe first direction 131 and may overlap with the light emitting layer370 in the second direction D2. The lateral edge 381 of the auxiliarylayer may extend downward in the second direction 132 and may coverupper portions of the lateral edge of the partition wall 360. In theexemplary embodiment shown in FIG. 3, the lateral edge has asemicircular shape for the portion that extends past the lateral edge ofthe upper surface of the partition wall in the first direction D1towards regions overlapping the light emitting layer 381 in the seconddirection D2. However, in other exemplary embodiments, this portion ofthe lateral edge may have a variety of different shapes.

In the embodiment shown in FIG. 3, the auxiliary layer 380 may providelyophobicity not only to the upper surface of the partition wall 360 butalso to an upper end of the lateral surface of the partition wall 360.Therefore, when the light emitting solution is injected into the opening365, sufficient lyophobicity by the auxiliary layer 380 may be provided,particularly in a region corresponding to an entrance of the opening365, to prevent the light emitting solution from overflowing thepartition wall.

According to the auxiliary layer 380 having this shape, the lightemitting solution provided in the manufacturing process may be moreeffectively provided inside the opening 365 and the light emitting layer370 may be more stably formed. Referring to the exemplary embodimentshown in FIG. 4, the auxiliary layer 380 may include a plurality ofnanoparticles 383. For example, the nanoparticles 383 may include silicananoparticles or the like. However, exemplary embodiments of the presentinventive concepts are not limited thereto and may include anynanoparticle having a diameter of a nano unit.

The nanoparticles 383 according to an exemplary embodiment may alsoinclude fluorine bonded to a surface of the nanoparticles 383. Thenanoparticles 383 including the fluorine bonded to the surface thereofmay provide the auxiliary layer 380 with a low surface energy.Therefore, the auxiliary layer 380 may exhibit a high lyophobicity.

A surface 380 s of the auxiliary layer 380 including the nanoparticles383 may have protrusions and depressions. The surface 380 s of theauxiliary layer 380 may be a surface having a predetermined roughness.For example, the surface 380 s of the auxiliary layer 380 including thenanoparticles 383 may have a greater roughness than the auxiliary layer380 shown in the embodiments of FIG. 1 to FIG. 3. The auxiliary layer380 according to the exemplary embodiment of FIG. 4 may providelyophobicity through the nanoparticles 383 that provide a predeterminedroughness even if the auxiliary layer does not include a separatelyophobic agent (e.g., a material having a lyophobic composition).

The auxiliary layer 380 including the plurality of nanoparticles 383 maybe excellent in plasma resistance and the like. For example, even if aplasma treatment according to a residual film removing process(described later) is performed on the surface of the auxiliary layer380, the auxiliary layer 380 may not incur significant damage.

The maximum thickness t2 of the auxiliary layer 380 may be from about 30nm to about 200 nm. The thickness of the auxiliary layer 380 may be setby the content of the nanoparticles 383. In an exemplary embodiment, thethickness of the auxiliary layer 380 may be considerably thinner thanthat of the partition wall 360 having a thickness of about 1 μm to about1.5 μm.

In embodiments in which the maximum thickness of the auxiliary layer 380is less than about 30 nm, it may be difficult to provide physicallyophobicity to the upper portion of the auxiliary layer 380. This isbecause the nanoparticles 383 for providing the physical lyophobicityare not sufficiently included in the auxiliary layer 380. The thicknessof the auxiliary layer 380 may not exceed 200 nm so that the auxiliarylayer 380 has sufficient lyophobicity and the light emitting solution isstably positioned on the opening 365. When the thickness of theauxiliary layer 380 exceeds 200 nm, the light emitting solution injectedinto the opening 365 may be excessively swollen, and the light emittingsolution may flow in an adjacent opening and may not be stablypositioned in the opening.

The auxiliary layer 380 including the nanoparticles 383 may have surfaceenergy of 20 dyne/cm or less. The partition wall 360 may have surfaceenergy of about 30 dyne/cm to about 43 dyne/cm, the light emittingsolution forming the light emitting layer 370 may have surface energy ofabout 17 dyne/cm to 35 dyne/cm, and the pixel electrode 191 may havesurface energy of 40 dyne/cm. The surface energy of the partition wall360 may be greater than those of the light emitting solution forming thelight emitting layer 370 and the auxiliary layer 380, and may be smallerthan that of the pixel electrode 191.

Hereinafter, a manufacturing method of the display device according tothe exemplary embodiments of FIGS. 5-9 will be described. FIGS. 5, 6, 7,8, and 9 illustrate cross-sectional views of a display devicemanufactured by using a manufacturing method according to an exemplaryembodiment.

First, the transistor including the buffer layer 111, the semiconductorlayer 130, the gate electrode 124, the source electrode 153, and thedrain electrode 155, the first insulating film 141, the secondinsulating film 142, and the third insulating film 160 are formed on thesubstrate 110. The pixel electrode 191 connected to the drain electrode155 is formed on the third insulating film 160.

Next, as shown in FIG. 5, the third insulating film 160 and thepartition wall 360 having the opening 365 in the pixel electrode 191 areformed. The opening 365 may expose a portion of the pixel electrode 191.

The partition wall 360 may be formed by patterning a first materiallayer. The partition wall 360 including the opening 365 may be formedthrough a photolithography process.

The first material layer may overlap a front surface of the substrate110, and may include, for example, an organic material such asbenzocyclobutene, a polyamide resin, a polyacrylic resin, a polyimideresin, and a phenol resin, or a siloxane-based inorganic material.

When the photolithography process is performed to form the opening 365,a residual film 361 is formed on the pixel electrode 191 by the firstlayer material forming the partition wall 360. For example, a thicknessof the residual film 361 (e.g., a length from an upper surface of theresidual film to a lower surface of the residual film in the seconddirection D2) may be about 10 nm to about 20 nm. In embodiments in whichthe residual film 361 is not removed, since the residual film 361 isdisposed between the light emitting layer 370 and the pixel electrode191, the light emitting efficiency and the light emitting lifetime ofthe light emitting device may be lowered.

As shown in FIG. 6, the residual film 361 described in FIG. 5 may beremoved through a residual film removing process. For example, a plasmaprocess or a UVO₃ process may be used to remove the residual film 361.However, exemplary embodiments are not limited thereto and any methodfor removing the residual film may be performed.

Since the residual film removing process is performed on the frontsurface of the substrate 110, a portion of a surface of the partitionwall 360 exposed on the substrate 110 may be damaged when removing theresidual film.

After the residual film removing process is performed, as shown in FIG.7, a second material layer 380 a is applied so as to overlap the frontsurface of the substrate 110. For example, as shown in FIG. 7, thesecond material layer 380 a may be disposed on upper surfaces andlateral edges of the partition wall 360 and the exposed surface of thepixel electrode 191.

The second material layer 380 a may include a compound and a resin thatprovide lyophobicity.

The compound with lyophobicity may be in a form of a polymer or amonomer. For example, the compound may include at least one of afluorine-based compound and a siloxane-based compound. Thefluorine-based compound may include, for example, a compound representedby Chemical Formula 1. The siloxane-based compound may include, forexample, a compound represented by Chemical. Formula 2. The resin mayinclude, for example, a compound represented by Chemical Formula 3.

A molecular weight of the monomer or polymer included in the secondmaterial layer 380 a may be smaller than the molecular weight of thefirst material layer included in the partition wall 360. In addition,the compound having lyophobicity included in the second material layer380 a may be included in an amount of about 5 wt % or less with respectto a total content of the second material layer 380 a.

A mask (MASK) is disposed on the second material layer 380 a, and aregion not overlapping the mask (MASK) is cured. An uncured area may besubsequently removed by using a solvent. in an exemplary embodiment, thesame solvent as that included in the second material layer 380 a may beused for removing the uncured second material layer. However, inexemplary embodiments, the solvent may include any solvent for removingthe uncured second material layer 380 a. The solvent may be an organicsolvent. For example, the solvent may be at least one of toluene,cyclopentanone, anisole, and propylene glycol methyl ether acetate(PGMEA). However, exemplary embodiments of the present inventiveconcepts are not limited thereto.

As shown in FIG. 8, the auxiliary layer 380 is then formed on thepartition wall 360 and is not formed within the opening 365. Althoughthe exemplary embodiment of FIG. 8 shows the auxiliary layer 380 ashaving an inclined lateral edge that is substantially aligned with theinclined lateral edge of the partition wall 360, the auxiliary layer 380may also be formed to have the shapes shown in the exemplary embodimentsof FIG. 2 and FIG. 3 depending on the shape or alignment of the mask.

As shown in FIG. 9, a light emitting solution 370 a for forming thelight emitting layer on the opening 365 is subsequently provided. Thelight emitting solution 370 a may be provided. through a solutionprocess, and for example, may be provided using inkjet printing.

In the display device according to an exemplary embodiment of thepresent inventive concepts, since the lyophobic auxiliary layer 380 isformed at the upper end (e.g., in the second direction D2) of thepartition wall 360, the light emitting solution 370 a provided by thesolution process may be stably positioned within the opening 365 of thepartition wall 360 without overflowing the auxiliary layer 380.

The solvent included in the light emitting solution 370 a is removedthrough a drying process or the like and the light emitting layer 370 asshown in FIG. 1 may be formed. Thereafter, the common electrode 270 andthe encapsulation layer 400 may be sequentially formed on the lightemitting layer 370 to provide the display device as shown in FIG. 1.

When the residual film removing process is performed after the auxiliarylayer is formed, not only the residual film disposed on the pixelelectrode but also the auxiliary layer disposed on the upper portion ofthe partition wall may be damaged. Therefore, the lyophobicity of theauxiliary layer may be lowered, and the light emitting solution providedfor forming the light emitting layer may also overflow from the opening365 to be positioned on the upper surface of the partition wall.

However, in the display device according to an exemplary embodiment ofthe present inventive concepts, the auxiliary layer having lyophobicityis formed after the residual film removing process is performed.Therefore, the auxiliary layer may stably provide lyophobicity to theupper surface of the partition wall to stably form the light emittinglayer as well as to effectively remove the residual film that lowers thelight emitting efficiency and the light emitting lifetime. Accordingly,it is possible to provide a display device having improved reliability.

Hereinafter, a manufacturing method of the display device according toan exemplary embodiment will be described with reference to FIG. 10 toFIG. 12. FIGS. 10. 11, and 12 illustrate a cross-sectional view of adisplay device manufactured by using a manufacturing method according toexemplary embodiments.

First, the transistor including the buffer layer 111, the semiconductorlayer 130, the gate electrode 124, the source electrode 153, and thedrain electrode 155, the first insulating film 141, the secondinsulating film 142, and the third insulating film 160, are formed onthe substrate 110.

The pixel electrode 191 connected to the drain electrode 155 is formedon the third insulating film 160.

Next, as shown in FIG. 10, a first material layer 360 a and the secondmaterial layer 380 a overlapping the front surface of the substrate 110are respectively formed on the third insulating film 160 and the pixelelectrode 191.

For example, the first material layer 360 a may include an organicmaterial such as benzocyclobutene, a polyamide resin, a polyacrylicresin, a polyimide resin, a phenol resin, or a siloxane-based inorganicmaterial.

The second material layer 380 a may include the plurality ofnanoparticles 383. The second material layer 380 a according to theexemplary embodiment may not include a compound having lyophobicity, butis not limited thereto, and it may partially include a compound havinglyophobicity.

An upper surface of the second material layer 380 a may be provided withprotrusions and depressions. The protrusions and depressions may beformed by the plurality of nanoparticles 383.

As shown in FIG. 11, the partition wall 360 including the opening 365and the auxiliary layer 380 are subsequently formed. The partition wall360 and the auxiliary layer 380 may be manufactured through aphotolithographic process.

In the above process, the residual film 361 generated while the firstmaterial layer is removed is formed on the exposed portion of the pixelelectrode 191.

The residual film 361 is a factor that degrades the light emittingefficiency and the light emitting lifetime of the light emittingelement. The residual film 361 may be removed through a residual filmremoving process. For example, the residual film removing process may bea plasma process or a UVO₃ process. However, exemplary embodiments ofthe present inventive concepts are not limited thereto.

In this embodiment, since the auxiliary layer 380 has excellentresistance to a plasma or UVO₃ process by the plurality of nanoparticles383, the auxiliary layer exhibits little surface damage from theresidual film removing process. The upper portion of the partition wall360 may maintain lyophobicity by the auxiliary layer 380, and only theunnecessary residual film 361 may be removed by the residual filmremoving process.

As shown in FIG. 12, the light emitting solution 370 a for forming thelight emitting layer may subsequently be injected onto the opening 365.The light emitting solution 370 a may be provided through the solutionprocess, and for example, may be provided through an. inkjet process.

According to an exemplary embodiment, in the process in which the lightemitting solution 370 a is provided, the auxiliary layer 380 providedwith the protrusions and depressions formed by the plurality ofnanoparticles 383 is disposed at the upper surface of the partition wall360. Since the protrusions and depressions of the auxiliary layer 380provides lyophobicity, the light emitting solution 370 a may be stablyinjected into the opening 365 without remaining at the upper end of theauxiliary layer 380. The light emitting solution 370 a may be injectedinto the opening 365 without overflowing the upper portion of thepartition wall 360.

While the solvent of the light emitting solution 370 a is removedthrough a drying process or the like, the light emitting layer 370 asshown in FIG. 4 may be formed. Thereafter, the common electrode 270 andthe encapsulation layer 400 may be sequentially formed on the lightemitting layer 370 to provide the display device as shown in FIG. 4.

Although it is illustrated that the auxiliary layer 380 including theplurality of nanoparticles 383 according to the exemplary embodiment isformed before the residual film removing process, the present inventionis not limited thereto, and the auxiliary layer 380 including theplurality of nanoparticles 383 may be formed subsequent to the residualfilm removing process as described for the exemplary embodiments of themanufacturing process of FIG. 5 to FIG. 9. The auxiliary layer 380including the plurality of nanoparticles 383 is resistant to damagecaused by the residual film removing process. Therefore, the auxiliarylayer 380 including the plurality of nanoparticles 383 may be formedbefore or after the residual film removing process.

Hereinafter, a display device according to an exemplary embodiment ofthe present inventive concepts will be described with reference to FIG.13. FIG. 13 illustrates a cross-sectional view of a display deviceaccording to an exemplary embodiment. The display device according tothe exemplary embodiment of FIG. 13 includes the substrate 110, thebuffer layer 111, the semiconductor layer 130, the first insulating film141, the gate electrode 124, the second insulating film 142, the sourceelectrode 153, the drain electrode 155, the third insulating film 160,the pixel electrode 191, the partition wall 360, the auxiliary layer380, the light emitting layer 370, the common electrode 270, and theencapsulation layer 400 as previously described and a detaileddescription thereof will be omitted. The light emitting layer 370 mayemit blue light.

Hereinafter, a color converting panel 20 disposed on the encapsulationlayer 400 will be described in detail.

The color converting panel 2.0 includes a second substrate 210overlapping (e.g., in the second direction D2) the first substrate 110.A red color filter 230R, a green color filter 230G, and a blue colorfilter 230B arranged in a first direction Di may be disposed on thesecond substrate 210.

The display device according to the exemplary embodiment is providedwith at least one light blocking member 220 surrounding the red colorfilter 230R, the green color filter 230G, and the blue color filter230B. For example, the red color filter 230R, green color filter 230Gand the blue color filter 230B may be spaced apart in the firstdirection 131 and the light blocking member 220 may fill the spacestherebetween. The light blocking member 220 may prevent different lightemitted from adjacent pixels from mixing with each other and maypartition the area in which the red color filter 230R, the green colorfilter 230G, and the blue color filter 230B are disposed.

A first flat film 240 is disposed between the light blocking members220, the red color filter 230R, the green color filter 230G, and theblue color filter 230B, and the encapsulation layer 400. For example, asshown in FIG. 13, the first flat film 240 may be disposed directly belowa lower surface (e.g., in the second direction D2) of the light blockingmembers 220, the red color filter 230R, the green color filter 230G, andthe blue color filter 230B. The first flat film 240 may be a film forflattening (e.g., planarizing) a surface of the light blocking member220, the red color filter 230R, the green color filter 230G, and theblue color filter 230B. For example, the first flat film 240 may flattenthe lower surface (e.g., in the second direction D2) of the lightblocking member 220, the red color filter 230R, the green color filter230G, and the blue color filter 230B. The first flat film 240 mayinclude at least one of an organic insulating material and an inorganicinsulating material.

The red color converting layer 250R, the green color converting layer250G, and the transmissive layer 250B may be disposed between the firstflat film 240 and the encapsulation layer 400. For example, the redcolor converting layer 250R, the green color converting layer 250G, andthe transmissive layer 250B may be disposed directly below a lowersurface (e.g., in the second direction D2) of the first flat film 240.The red color conversion layer 250R, the green color conversion layer250G, and the transmissive layer 250B may be repeatedly arranged alongthe first direction 131 and may be spaced apart from each other. Forexample, as shown in FIG. 13, spaces between the color conversion layersmay overlap (e.g., in the second direction D2) with the light blockingmembers 220.

The red color conversion layer 250R and the green color conversion layer250G convert light emitted from the light emitting layer 370 and emitthe light. For example, the red color conversion layer 250R may convertblue light emitted from the light emitting layer 370 into red light. Thered color conversion layer 250R may include a first semiconductornanocrystal 251R that converts blue light incident from the lightemitting layer 370 into red light. The first semiconductor nanocrystal251R may include at least one of a phosphor and a quantum dot.

The green color conversion layer 250G may convert blue light emittedfrom the light emitting layer 370 into green light. The green colorconversion layer 250G may include a second semiconductor nanocrystal251G that converts blue light incident from the light emitting layer 370into green light. The second semiconductor nanocrystal 251G may includeat least one of a phosphor and a quantum dot.

The transmissive layer 250B emits incident light from the light emittinglayer 370 without conversion of the incident light. For example, bluelight may be incident on the transmissive layer 250B and may be emittedas it is without conversion by the transmissive layer.

The quantum dot included in the first semiconductor nanocrystal 251R andthe second semiconductor nanocrystal 251G may be independently selectedfrom a Group compound, a Group III-V compound, a Group IV-VI compound, aGroup IV element, a Group IV compound, and a combination thereof Thespecific compounds are the same as those described above with respect tothe quantum dot of the light emitting layer 370.

The transmissive layer 250B may transmit incident light as it is. Thetransmissive layer 250B may include a resin that transmits blue light.The transmissive layer 250B disposed in a region that emits blue lightdoes not include any separate semiconductor nanocrystal.

Although not shown, the transmissive layer 250B may further include atleast one of a dye and a pigment. The transmissive layer 250B includingthe dye or pigment may reduce the external light reflection, and mayprovide the blue light with improved color purity.

At least one of the red color conversion layer 250R, the green colorconversion layer 250G; and the transmissive layer 250B may furtherinclude scatterers 252. The contents of the respective scatterers 252included in the red color conversion layer 250R, the green colorconversion layer 250G and the transmissive layer 250B may be different.The scatterers 252 may increase an amount of light that is converted inor passes through the color conversion layers 250R and 250G and thetransmissive layer 250B and then is emitted through the color conversionlayers and the transmissive layer. The scatterers 252 may uniformlyprovide front luminance and lateral luminance for the light emitted fromthe light emitting layer 370.

The scatterers 252 may include any material capable of evenly scatteringincident light. In an exemplary embodiment, the scatterers 332 mayinclude at least one among TiO2, ZrO2, Al2O3, In2O3, ZnO, SnO2, Sb2O3,and ITO.

As one example, the red color conversion layer 250R, the green colorconversion layer 250G, and the transmissive layer 250B may include aphotosensitive resin, and may be formed through a photolithographyprocess. However, exemplary embodiments of the present inventiveconcepts are not limited thereto. For example, the red color conversionlayer 250R, the green color conversion layer 250G, and the transmissivelayer 250B may be formed through a printing process or an inkjetprocess, and the red color conversion layer, the green color conversionlayer and the transmissive layer may include a material that is not thephotosensitive resin. In the present specification, although it isdescribed that the color conversion layer and the transmissive layer areformed through the photolithography process, the printing process, orthe inkjet process, exemplary embodiments of the present inventiveconcepts are not limited thereto.

The red color conversion layer 250R may overlap the red color filter230R in the second direction D2, the green color conversion layer 250Gmay overlap the green color filter 230G in the second direction D2, andthe transmissive layer 250B may overlap the blue color filter 230B inthe second direction 132.

A second flat film 260 is disposed in lateral spaces between the redcolor conversion layer 250R, the green color conversion layer 250G andthe transmissive layer 250B and between lower surfaces of the colorconversion layers and an upper surface of the encapsulation layer 400,The second flat film 260 may overlap a front surface of the secondsubstrate 210.

The second flat film 260 may flatten (e.g., planarize) one surface ofthe red color conversion layer 250R, the green color conversion layer250G, and the transmissive layer 250B, The second flat film 260 mayinclude an organic insulating material or an inorganic insulatingmaterial. However, exemplary embodiments of the present inventiveconcepts are not limited thereto and the second flat film 260 mayinclude any material capable of performing a flattening function.

In the exemplary embodiment of FIG. 13, the encapsulation layer 400 andthe color converting panel 20 are in direct contact with each other.However, exemplary embodiments of the present inventive concepts are notlimited thereto. For example, in some exemplary embodiments, a separatefilling layer may be disposed between the encapsulation layer 400 andthe color converting panel 20. In this embodiment, the encapsulationlayer 400 and the color converting panel 20 may be combined throughvarious known methods and structures, such as by a separate adhesivelayer or by a sealant along an edge of the display device. In addition,the present specification may include a filter layer positioned betweenthe color conversion layers 250R and 250G and the encapsulation layer400 to emit light of a specific wavelength, or may include a secondsubstrate 210 and the color conversion layers 250R and 250G, and a bluelight blocking filter positioned between the second substrate and thetransmissive layer 250B.

While this invention has been described in connection with exemplaryembodiments, it is to be understood that the invention is not limited tothe disclosed embodiments, but, on the contrary, is intended to covervarious modifications and equivalent arrangements included within thespirit and scope of the appended claims.

What is claimed is:
 1. A display device comprising: a partition walldisposed on a substrate between a first electrode and a secondelectrode, the partition wall having an opening; a light emitting layerdisposed in the opening; and an auxiliary layer having lyophobicitydisposed between the partition wall and the second electrode.
 2. Thedisplay device of claim 1, wherein a maximum thickness of the auxiliarylayer is about 100 nm or more and about 200 nm or less.
 3. The displaydevice of claim 1, wherein a maximum thickness of the partition wall isabout 1 μm or more and about 1.5 μm or less.
 4. The display device ofclaim 1, wherein the auxiliary layer does not overlap the opening. 5.The display device of claim 1, wherein the auxiliary layer includes atleast one of a fluorine-based compound and a siloxane-based compound. 6.The display device of claim 5, wherein. the fluorine-based compound isrepresented by Chemical Formula 1, and the siloxane-based compound isrepresented by Chemical Formula 2:


7. The display device of claim 1, wherein a lateral edge of theauxiliary layer is inclined and is aligned with an inclined lateral edgeof the partition wall.
 8. The display device of claim 1, wherein theauxiliary layer exposes a portion of an upper surface of the partitionwall.
 9. The display device of claim 1, wherein the auxiliary layeroverlaps a lateral edge of the partition wall.
 10. A display devicecomprising: a partition wall disposed on a substrate between a firstelectrode and a second electrode, the partition wall having an opening;a light emitting layer disposed in the opening; and an auxiliary layerdisposed between the partition wall and the second electrode, whereinthe auxiliary layer includes a plurality of nanoparticles, and a surfaceof the auxiliary layer facing the second electrode is provided withprotrusions and depressions.
 11. The display device of claim 10, whereina maximum thickness of the auxiliary layer is from about 30 nm to about200 nm.
 12. The display device of claim 10, wherein the plurality ofnanoparticles include silica nanoparticles.
 13. A manufacturing methodof a display device, comprising: forming a thin film transistor and apixel electrode connected to the thin film transistor on a substrate;forming a first material layer overlapping the pixel electrode on thesubstrate; etching the first material layer to form a partition wallincluding an opening; removing a residual film formed on the pixelelectrode; and forming an auxiliary layer having lyophibicity on thepartition wall.
 14. The manufacturing method of the display device ofclaim 13, wherein the removing of the residual film includes theperforming of at least one of a plasma process and a UVO₃ process. 15.The rnanufacturing method of the display device of claim 13, wherein theforming of the auxiliary layer includes: forming a second material layeron the partition wall; removing an uncured area in the second materiallayer using an organic solvent.
 16. The manufacturing method of thedisplay device of claim 15, wherein the organic solvent includes atleast one of toluene, cyclopentanone, anisole, and propylene glycolmethyl ether acetate (PGMEA).
 17. The manufacturing method of thedisplay device of claim 15, wherein the second material layer includesthe same solvent as the organic solvent.
 18. The manufacturing method ofthe display device of claim 13, further comprising: providing a lightemitting solution in the opening; and drying the light emitting solutionto form a light emitting layer.
 19. The manufacturing method of claim13, wherein the forming of the auxiliary layer is performed after theremoving of the residual film.
 20. A manufacturing method of a displaydevice, comprising: forming a thin film transistor and a pixel electrodeconnected to the thin film transistor on a substrate; sequentiallyforming a first material layer and a second material layer overlappingthe substrate on the pixel electrode; etching the first material layerand the second material layer to form a partition wall having an openingand an auxiliary layer; and removing a residual film formed on the pixelelectrode, wherein the second material layer includes a plurality ofnanoparticles.
 21. The manufacturing method of the display device ofclaim 20, wherein the plurality of nanoparticles include silicananoparticles.
 22. The manufacturing method of the display device ofclaim 20, wherein a surface of the auxiliary layer includes protrusionsand depressions.
 23. The display device of claim 1, wherein the lightemitting layer includes a quantum dot.
 24. The display device of claim1, further comprising a red color conversion layer, a green colorconversion layer, and a transmissive layer that overlap the lightemitting layer.
 25. The display device of claim 24, wherein each of thered color converting layer and the green color converting layer includesa quantum dot.